?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC2786 npn epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted h fe classification symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current 20 ma p c collector power dissipation 250 mw t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =10 a, i e =0 30 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 20 v bv ebo emitter-base breakdown voltage i e =10 a, i c =0 4 v i cbo collector cut-off current v cb =30v, i e =0 0.1 a i ebo emitter cut-off current v eb =4v, i c =0 0.1 a h fe dc current gain v ce =6v, i c =1ma 40 240 v be (on) base-emitter on voltage v ce =6v, i c =1ma 0.72 v v ce (sat) collector-emitter saturation voltage i c =10ma, i b =1ma 0.1 0.3 v f t current gain bandwidth product v ce =6v, i c =1ma 400 600 mhz c ob output capacitance v cb =6v, i e =0, f=1mhz 1.2 pf c crbb? collector-base time constant v ce =6v, i c =1ma f=31.9mhz 12 15 ps nf noise figure v ce =6v, i c =1ma r s =50 ? , f=100mhz 3.0 5.0 db g pe power gain v ce =6v, i c =1ma f=100mhz 18 22 db classification r o y h fe 40 ~ 80 70 ~ 140 120 ~ 240 KSC2786 tv pif amplifier, fm tuner rf amplifier, mixer, oscillator ? high current gain bandwidth product : f t =600mhz (typ.) ? high power gain : g pe =22db at f=100mhz 1.emitter 2. collector 3. base to-92s 1
?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC2786 typical characteristics figure 1. static characteristics figure 2. base-emitter on voltage figure 3. dc current gain figure 4. f t - i c figure 5. saturation voltage figure 6. output capacitance 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 i b = 60 ua i b = 30 ua i b = 70 ua i b = 20 ua i b = 110 ua i b = 100 ua i b = 90 ua i b = 80 ua i b = 50 ua i b = 40 ua i b = 10 ua i c [ma], collector current v ce [v], collector-emitter voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 v ce = 6 v i c [ma], collector current v be [v], base-emitter voltage 110 10 100 1000 v ce = 6v h fe , dc current gain i c [ma], collector current 110100 10 100 1000 10000 v ce = 6v f t [mhz], current gain bandwidth product i c [ma], collector current 0.1 1 10 0.01 0.1 1 10 i c = 10 i b v be (sat) v ce (sat) v be (sat), v ce (sat)[v], saturation voltage i c [ma], collector current 1 10 100 0.1 1 10 f = 1mhz i e = 0 c ob [pf], output capacitance v cb [v], collector-base voltage
?2001 fairchild semiconductor corporation KSC2786 rev. a1, june 2001 typical characteristics (continued) figure 7. yie - f figure 8. yfe - f figure 9. yre - f figure 10. yoe - f figure 11. yib - f figure 12. yfb - f 0.1 1 10 100 0.01 0.1 1 10 100 bie bie gie gie 10.7 mhz 100 mhz v ce = 6 v gie [ms], conductance bie [ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 gfe gfe -bfe -bfe 100 mhz 100 mhz 10.7 mhz 10.7 mhz v ce = 6 v gfe [ms], conductance bfe [ms], susceptance i c [ma], collector current 0.1 1 10 100 0.5 0.4 0.3 0.2 0.1 0.0 v ce = 6 v -gre -gre -bre -bre 10.7 mhz 10.7 mhz 100 mhz 100 mhz gre [ms], conductance bre [ms], susceptance i c [ma], collector current 0.1 1 10 100 0.01 0.1 1 v ce = 6 v goe goe boe boe 10.7 mhz 10.7 mhz 100 mhz 100 mhz goe [ms], conductance boe [ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 gib gib -bib -bib 10.7 mhz 10.7 mhz 100 mhz 100 mhz v ce = 6 v gib [ms], conductance bib [ms], susceptance i c [ma], collector current 0.1 1 10 100 1 10 100 1000 gfb gfb bfb bfb 100 mhz 100 mhz 10.7 mhz 10.7 mhz v ce = 6 v gfb [ms], conductance bfb [ms], susceptance i c [ma], collector current
?2001 fairchild semiconductor corporation KSC2786 rev. a1, june 2001 typical characteristics (continued) figure 13. yrb - f figure 14. yre - f figure 15. yfe - f figure 16. yoe - f figure 17. power gian & nf figure 18. yie - f 0.1 1 10 100 0.01 0.1 1 v ce = 6 v -grb -grb -brb -brb 10.7 mhz 10.7 mhz 100 mhz 100 mhz grb [ms], conductance brb [ms], susceptance i c [ma], collector current 10 100 1000 0.01 0.1 1 10 v ce = 6 v i c = 1 ma -bre -gre gre [ms], conductance bre [ms], susceptance f [mhz], frequency 10 100 1000 1 10 100 1000 v ce = 6 v i c = 1 ma gfe -bfe gfe [ms], conductance bfe [ms], susceptance f [mhz], frequency 10 100 1000 0.01 0.1 1 10 v ce = 1 v i c = 1 ma boe goe goe [ms], conductance boe [ms], susceptance f [mhz], frequency 0.1 1 10 0 5 10 15 20 25 vce = 6 v f = 100 mhz nf g pe nf [db], noise figure g pe [db], power gain i c [ma], collector current 10 100 1000 0.1 1 10 100 v ce = 6 v i c = 1 ma bie gie gie [ms], conductance bie [ms], susceptance f [mhz], frequency
?2001 fairchild semiconductor corporation KSC2786 rev. a1, june 2001 typical characteristics (continued)
4.00 0.20 3.72 0.20 2.86 0.20 2.31 0.20 3.70 0.20 0.77 0.10 14.47 0.30 (1.10) 0.49 0.10 1.27typ [1.27 0.20] [1.27 0.20] 1.27typ 0.66 max. 0.35 +0.10 ?.05 to-92s package demensions ?2001 fairchild semiconductor corporation rev. a1, june 2001 KSC2786 dimensions in millimeters
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: ?2001 fairchild semiconductor corporation rev. h3 trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. a cex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? microwire? optologic? optoplanar? pacman? pop? power247? powertrench ? qfet? qs? qt optoelectronics? quiet series? slient switcher ? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? trutranslation? tinylogic? uhc? ultrafet ? vcx? star*power is used under license
|
